Module 4 : Chemical and non–chemical approach to materials synthesis - part 2

Lecture 25 : Sputtering Processes for Thin Film Deposition

Parameters for DC Sputtering

Sputter voltage

• typically -2 to -5 kV

Substrate Bias Voltage

• substrate is being bombarded by electrons and ions from target and plasma sputtering film while you deposit

• neutral atoms deposit independently

• put negative bias on the substrate to control this

• can significantly change film properties

Deposition rate

• changes with Ar pressure

• increases with sputter yield

usually increases with high voltage