Module 6 : Semiconductor Memories
Lecture 28 : Static Random Access Memory (SRAM)
 
28.4 READ Operation
Consider a data read operation, shown in Figure 28.41, assuming that logic '0' is stored in the cell. The transistors M2 and M5 are turned off, while the transistors M1 and M6 operate in linear mode. Thus internal node voltages are v1eq0 and vddeqvt before the cell access transistors are turned on. The active transistors at the beginning of data read operation are shown in Figure 28.41.
 
readsram
Fig 28.41: Read Operation
 
After the pass transistors M3 and M4 are turned on by the row selection circuitry, the voltage of CBb will not change any significant variation since no current flows through M4. On the other hand M1 and M3 will conduct a nonzero current and the voltage level of CB will begin to drop slightly. The node voltage V1 will increase from its initial value of '0'V. The node voltage V1 may exceedthe threshold voltage of M2 during this process, forcing an unintended change of the stored state. Therefore voltage V1 must not exceed the threshold voltage of M2, so the transistor M2 remains turned off during read phase, i.e.,
 
V1max (Eq 28.1)
 
The transistor M3 is in saturation whereas M1 is linear, equating the current equations we get
 
bn3 (Eq 28.2)
 
substituting Eq 28.1 in Eq 28.2 we get
 
beta/beta (Eq 28.3)
 
 
 
 
 
 
 
 
 
 
 
 
 
 
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