Module 3 : Fabrication Process and Layout Design Rules
Lecture 12 : CMOS Fabrication Technologies
 
12.4 N-well Technology (contd.)

CVD is again used to deposit and insulating silicon dioxide layer over the entire wafer. After this the contacts are defined and etched away exposing the silicon or polysilicon contact windows. These contact windows are essential to complete the circuit interconnections using the metal layer, which is patterned in the next step.

 
Metal (aluminum) is deposited over the entire chip surface using metal evaporation, and the metal lines are patterned through etching. Since the wafer surface is non-planar, the quality and the integrity of the metal lines created in this step are very critical and are ultimately essential for circuit reliability.
 
The composite layout and the resulting cross-sectional view of the chip, showing one nMOS and one pMOS transistor (built-in n-well), the polysilicon and metal interconnections. The final step is to deposit the passivation layer (for protection) over the chip, except for wire-bonding pad areas.
 
This completes the fabrication of the CMOS inverter using n-well technology.
 
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