Objective: To study the input and output characteristics of a PNP/ NPN transistors (Bipolar function transisteor) in common base configuration Equipment: Power Supply ( 0-15V), DMMs and potentiometer and other components.

Theory

The base emitter junction the BJT is forward biased. If we measure the variation of base current as a function of base emitter voltage for , a graph similar to the p-n junction diode under forward bias is obtained. When is increased, a few of the carriers are able to drift to the base collector junction and the base current is reduced. The reduction in current is small. The resultant curve for different is shown in the figure.