A very important application of light energy for the generation of electrical power comes from the photovoltaic (PV) solar cell. A PV solar cell is made up of n- and p-type materials of either the same or different compounds. For example, photovoltaic solar cells made out of polycrystalline n-Si and p-Si are commercially available. Pure silicon material is made n-type (electron donating) by doping it with phosphorous and p-type by doping it with boron. When n- and p-type Si are joined together, an electric field is developed at their interface due to the difference in the energy of their electrons. This field makes the n-type semiconductor negatively charged while the p-type semiconductor becomes positively charged. When the junction is illuminated with photons of energy greater than the band gap of Si, excited electrons due to the presence of the electrical field are forced towards n-type and holes (generated due to the creation of vacancy in the valence band) are forced to reach the p- type material. As a result of this, both ends of n- and p- type semiconductors become more charged than what they were before the illumination. If these two ends are short circuited by a connecting a wire through a load, electrons flow from n- type to p-type semiconductor, giving us electrical energy. In Figure 23.5, the mechanism of electron/hole transfer across the interface of p- and n-type semiconductors is shown. |