This is the basis of D'yakonov-Perel spin relaxation. Pikus et al [2] have derived an expression for the spin relaxation rate due to the D'yakonov-Perel's mechanism in bulk non-degenerate semiconductors where the carriers are in quasi equilibrium described by Boltzmann statistics. The expression is
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where Q is a dimensionless quantity ranging from 0.8 – 2.7 depending on the dominant momentum relaxation process, Eg is the bandgap, tm is the momentum relaxation time and α is a measure of Dresselhaus interaction strength given by
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where m0 is the free electron mass, m* is the electron's effective mass and
is a spin-orbit splitting of the valance band. Note that eqn.(5) shows that the spin relaxation rate is inversely proportional to the momentum relaxation rate. Furthermore, it shows that the spin relaxation rate will have a strong temperature dependence even if the momentum relaxation rate is temperature independent.