| Diffusion Capacitance  Deflection layer capacitance-reverse junction when forward biased another contribution from rearrangement of minority carrier density-Diffusion capacitance Applied voltage     
                          
                            | Current  |   Forward Bias
  Small signal amplitude
 Small signal as component of hole density in n     For  .        Similar expression for electron density in p side.  Now for holes n in n side we know that continuity equation is S     Thus  Or     
                          
                            | Non Time varying case  |  So here  effect of frequency dependence  Small signal current   admittance due to diffusion only 
 low frequency  low frequency   and  are function of bias frequency.  so deflection layer  capacitance will dominate at high frequencies.
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