Molecular Beam Epitaxy

Introduction:

Molecular Beam Epitaxy (MBE) was developed in the early 1970s as a means of growing high-purity epitaxial layers of compound semiconductors. Since that time it has evolved into a popular technique for growing III-V compound semiconductors as well as several other materials. MBE can produce high-quality layers with very abrupt interfaces and good control of thickness, doping, and composition. Because of the high degree of control possible with MBE, it is a valuable tool in the development of sophisticated electronic and optoelectronic devices. In this chapter we discuss MBE growth of semiconductor layers necessary for resonant-cavity photo-detectors.