Chapter 3   : Fabrication of CMOS Integrated Circuits

Capacitors can also be constructed using the metal and poly layers with standard oxide thicknesses between layers. A key disadvantage of such structures is that capacitance per unit area is small because of thicker oxide. To reduce the capacitor area and to avoid the extra processing steps lateral capacitor structures can be used. A lateral capacitor can be formed in one layer of metal by separating one plate from another by spacing. Such lateral capacitor can be used in conjunction with vertical capacitors.