The ion implantation results in less lateral diffusion i.e. diffusion of dopant atoms in the direction parallel to the surface of semiconductor compared to the vertical diffusion where diffusing species are moving in a direction normal to the wafer surface.

The dopant elemental selection can be easily carried out by mass separation from impure sources and this helps in preventing contamination.

The room temperature process allows resist to be used and it allows doping anytime during process. Modeling is very accurate

Complex doping profiles can be made using multiple energy implants

Highly abrupt junctions can be made

Highly automatic parameters