N = concentration (cm-3)

N0 = surface concentration (cm-3)

x = position inside silicon relative to the surface

D = diffusion coefficient for dopant (cm2/s)

t = time (seconds)

and

N0 = surface concentration after the drive (cm-3)

N01 = surface concentration after the drive (cm-3)

D1 = diffusion coefficient f of dopant during the predep (cm2/s)

t1 = time of the predep (seconds)

D2 = diffusion coefficient f of dopant during the drive (cm2/s)

t2 = time of the drive (seconds)