Transistor problems:
Variations in threshold voltage: This may occur due to variations in
oxide thickness, ion-implantation and poly layer.
Changes in source/drain diffusion overlap.
Variations in substrate.
Wiring problems:
Diffusion: There is variation in doping which results in variations in
resistance, capacitance.
Poly, metal: Variations in height, width resulting in variations in
resistance, capacitance.
Shorts and opens.
Oxide problems:
Variations in height.
Lack of planarity.
Via problems:
Via may not be cut all the way through.
Undersize via has too much resistance.
Via may be too large and create short. |