Bismuth manganite is an interesting multiferroic material with a perovskite structure. It is a low temperature ferromagnet and a room temperature ferroelectric. The material shows ferromagnetic ordering below 105 K attributed to the orbital ordering of B-site ions i.e. Mn³⁺ ions and a magnetization of 3.6 µ_B per formula unit.¹⁵ The material has a perovskite triclinic structure which changes to monoclinic structure at ~450 K and then to a non-ferroelectric orthorhombic phase at ~770K.¹⁶  However, the trouble with this material for device application has been its low resistivity, especially in polycrystalline form. The bulk form of material has been shown to exhibit multiferroic behavior near 80 K¹⁷ and negative magneto-capacitance effect in the vicinity of magnetic transition temperature (T_m) with -0.6% change in the dielectric constant near T_m.¹⁶ The problem which arises with this material is that it requires high pressures in bulk form¹⁷. In contrast, recent work has shown that it can made resistive in thin film form which can be prepared with much ease.¹⁸