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8.7 Two Phase Materials
Another method to for achieving high degree of magnetoelectric coupling is to mix ferroelectric (e.g. BaTiO3) and ferromagnetic (e.g. CoFe2O4) materials and utilize the strain between two phases to introduce magneto-electric coupling. Such a coupling requires that two phase have good contact between them i.e. to have an interface through which properties can coupled such as in the form of composites, epitaxial multilayers and laminates. For a few systems, the data is shown in the table below.
Table 8.2 Magnetoelectric coupling constant data for selected two-phase magnetoelectric systems
Type of system |
Materials |
Coupling constant (mV/cm-Oe) |
Composite28 |
BaTiO3 and CoFe2O4 |
50 |
Laminated composite29 |
Terfenol-D in polymer matrix and PZT in polymer matrix |
3,000 |
Laminate30 |
Terfenol-D/PZT |
4,800 |
Laminate31 |
La0.7Sr0.3MnO3 and PZT |
60 |
Laminate32 |
NiFe2O4 and PZT |
1,400 |
Epitaxial thin film structures33 |
BaTiO3 and CoFe2O4 |
-- |
Epitaxial thin film structures34 |
BiFeO3
and CoFe2O4 |
-- |
In two phase structures, as evident from some of references, one can create large changes in the magnetization owing to strain due to the ferroelectric phase transition of the ferroelectric material during film growth or one can also attempt to alter the magnetic structure by applying a field the piezoelectric material which thereby generates a strain in the magnetic material in the vicinity. Epitaxial growth of layers allows very good interfacial contact between two materials as shown in case of BaTiO3 and CoFe2O4 which has potential to improve the coupling of parameters
28A.M.J.G. van Run, D.R. Terrel, and J.H. Scholing, J. Mater. Sci, 9, p1710-1714 (1974) |
29C.-W. Nan et al., Appl. Phys. Lett., 81, 3831–-3833, (2002). |
30N. Cai, C.-W. Nan, J. Zhai, and Y. Lin, Appl. Phys. Lett., 84, 3516–-3519 (2004). |
31G. Srinivasan, Phys. Rev. B 65, 134402 (2002). |
32M.K. Lee et al., Appl. Phys. Lett., 77, 3547–-3549 (2000). |
33H. Zheng et al., Science, 303, 661–-663 (2004). |
34F. Zavaliche et al., Nano Lett., 5, 1793–-1796 (2005) |
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