| 1 | Introduction to Basic concepts | PDF unavailable |
| 2 | Requirements for high speed circuits, devices and materials | PDF unavailable |
| 3 | Classification and properties of semiconductor devices | PDF unavailable |
| 4 | Ternary compound semiconductors and their applications | PDF unavailable |
| 5 | Ternary compound semiconductors and their applications(contd.) | PDF unavailable |
| 6 | Crystal structures in GaAs | PDF unavailable |
| 7 | Dopants and impurities in GaAs and InP | PDF unavailable |
| 8 | Brief Overview of GaAs Technology for High Speed Devices | PDF unavailable |
| 9 | Epitaxial Techniques for GaAs and high speed devices | PDF unavailable |
| 10 | MBE and LPE for GaAs Epitoxy | PDF unavailable |
| 11 | GaAs and InP devices for Microelectronics | PDF unavailable |
| 12 | Metal Semiconductor contacts for MESFET | PDF unavailable |
| 13 | Metal Semiconductor contacts for MESFET(contd) | PDF unavailable |
| 14 | Metal Semiconductor contacts for MESFET(Contd) | PDF unavailable |
| 15 | Ohmic contacts on semiconductors | PDF unavailable |
| 16 | Fermi level pinning, I V characteristics of Schottky Barrier Diodes | PDF unavailable |
| 17 | Schottky Barrier Diodes I V characteristics of Non idealities -1 | PDF unavailable |
| 18 | Schottky Barrier Diodes I V characteristics of Non idealities -1 | PDF unavailable |
| 19 | Causes of Non idealities in the Schottky Barrier Diodes (I V characteristics) | PDF unavailable |
| 20 | MESFET operations and I V characteristics | PDF unavailable |
| 21 | MESFET I V characteristics Shockley's Model | PDF unavailable |
| 22 | MESFET Shockley's Model and velocity saturation effect | PDF unavailable |
| 23 | MESFET velocity saturation effect on drain current saturation | PDF unavailable |
| 24 | MESFET : Drain current saturation Ids due to velocity saturation | PDF unavailable |
| 25 | MESFET : Effects of channel length and gate length on IDS and gm | PDF unavailable |
| 26 | MESFET : Effects of velocity saturation and velocity field characteristics | PDF unavailable |
| 27 | MESFET : Effects of velocity field characteristics - Overshoot effects | PDF unavailable |
| 28 | MESFET : Velocity overshoot effect and self aligned MESFET SAINT | PDF unavailable |
| 29 | Self Aligned MESFET SAINT Threshold Voltage and Sub Threshold current | PDF unavailable |
| 30 | Hetero junctions | PDF unavailable |
| 31 | Hetero junctions and high electron Mobility Transistor(HEMT) | PDF unavailable |
| 32 | Hetero junctions and high electron Mobility Transistor(HEMT) (Contd.) | PDF unavailable |
| 33 | High Electron Mobility Transistor | PDF unavailable |
| 34 | HEMT off voltage, I-V characteristics and trans conductance | PDF unavailable |
| 35 | I-V characteristics and trans conductance and optimization | PDF unavailable |
| 36 | Indium phosphide based HEMT | PDF unavailable |
| 37 | Pseudomorphic HEMT and Hetrojunction Bipolar Transistors | PDF unavailable |
| 38 | Hetero junction Bipolar Transistors (HBT) | PDF unavailable |
| 39 | Hetero junction Bipolar Transistors (HBT) (Contd.) | PDF unavailable |
| 40 | Hetero junction Bipolar Transistors (HBT) (Contd.) | PDF unavailable |
| 41 | Hetero junction Bipolar Transistors(HBT)-4(Contd) | PDF unavailable |