MESFET (Metal Semiconductor Field Effect Transistor)

MESFETs are Mostly made with GaAs contenders for GaAs IC 10 5 transistor mark Analog and digital applications.

-Communication technology satellite and fibre optic

-Cell phone

- Oscillator and 168 GHz for amplifier

New materials for MESFET SiC and GaN wide band gap semiconductor

-higher breakdown voltage 100kV

-higher thermal conductivity

-GaN has higher electron velocity than GaAs

Also SiGe are used

MESFETs are suitable for compound semiconductor where oxide making is difficult. Silicon dioxide material are easy to obtain in Si, and therefore mostly MOSFETs are used in Si/SiGe.n-channel is always better as faster electron transport than holes in most materials.

Gate channel Metal-Semiconductor/ Schottky diode

Normally ON MESFETs (Depletion Mode) with zero gate (-ve threshold) voltageis used.

Normally OFF MESFETs (Enhancement Mode) have positive threshold voltage on the gate.

Ion implantation and electrode metallization are needed for the fabrication of MESFETs on a Semi-insulating GaAs substrate. Simpler technology than MOSFETs or HEMTs.