Position of Ei
1) Exact position of Ei
Intrinsic semiconductor  . In this case, n = p, and E F = E i
E i in Si is 0.0073 eV below midgap.
GaAs is 0.0403 eV above midgap, at 300 k.
2) Freeze out/Extrinsic T.
 this is useful for low temperature calculations.
|
3) Extrinsic
Therfore if the doping is a function of position, the bands will bend as shown in Fig. 7.2
|
