Chapter 3   : Fabrication of CMOS Integrated Circuits


Kinetics of SiO2 Growth

The Linear and Parabolic growth laws were developed by Deal and Grove, and are known as the Linear Parabolic Model. This oxide growth model has been empirically proven to be accurate over a wide range of temperatures (700-1300°C), oxide thicknesses (300-20,000 angstroms), and oxidant partial pressures (0.2-25 atmospheres).

Fig.3.14 and 3.15 pictures various diffusions possible and the concentration of species during thermal oxidation and is the basis for Deal and Grove model.