This Ammonium hydroxide-hydrogen Peroxide Mixture (APM) is also known as Standard Clean 1 (SC1 or RCA 1). To remove metallic contamination, HCl: H₂O₂ : H₂O mixture is used. This Hydrochloric acid - hydrogen Peroxide-water Mixture (HPM) is also known as Standard Clean 2 (SC2 or RCA 2). Dilution and bath temperature are similar to APM. Native/chemical oxide etch is carried out in diluted HF:H₂O solution at the ratio of 1:100 or weaker. Thin films are very fragile and material loss also can result by such very resourceful and time consuming cleaning processes. In practice it is simplified by less aggressive cleans. In many applications a sequence involving just one cleaning step followed with D.I. water rinse and dry is enough.

In a dry cleaning technology, removal of contaminant fro m the surface takes place via chemical reaction in the gas- phase converting it into a volatile compound. Gas sources like O₂, H₂, CO₂, Ozone, SiCl₄, HCl, are used for dry cleaning. Methods like Laser, Sputtering etc are based momentum transfer between specie impinging on the surface. Gas-phase cleaning methods lack a shear chemical and physical strength of liquid cleaning ambient. However gas-phase surface processing methods are fully capable of controlling organic contamination.