Chapter 3   : Fabrication of CMOS Integrated Circuits

Table 3 : Comparison of the CZ and FZ Growth Methods

Characteristic
CZ
FZ
Growth Speed (mm/min)
1 to 2
3 to 5
Crucible
Yes
No
Consumable Material Cost
High
Low
Heat-Up/Cool-Down Times
Long
Short
Axial Resistivity Uniformity
Poor
Good
Oxygen Content (atoms/cm3 )
>1x10 18
<1x10 16
Carbon Content (atoms/cm3 )
>1x10 17
<1x10 16
Metallic Impurity Content
Higher
Lower
Bulk Minority Charge Carrier Lifetime (s)
5-100
1,000-20,000
Production Diameter (mm)
150-200
100-150