It can be seen that for small duration, the oxidation is a reaction controlled process and longer duration it is a diffusion controlled process.

From the Deal and grove model, we have seen that the oxide growth rate is affected by time, temperature, and pressure. Thickness of oxide is raised by an increase in oxidation time, oxidation temperature, or oxidation pressure. Other factors that affect thermal oxidation growth rate for SiO₂ include: the crystallographic orientation of the wafer; the wafer's doping level; the presence of halogen impurities in the gas phase and the presence of plasma during growth.