Types of exposures

Light -- 436 nm - 157 nm; near UV to Deep UV optical lithography

X-rays -- 5 nm - 0.4 nm; x-ray lithography

Electrons -- 10 keV - 100 keV; electron beam lithography

Ions -- 50 keV - 200 keV; focused ion beams

Basic Steps of a photo lithography process

Photo resists are used in a process typical of this process: Surface preparation, Spin coat, Prebake (Soft bake), Exposure and alignment with Mask, Post Exposure Bake, Develop.