Example : Find the projected range, straggle and peak concentration for a 150 keV, 10¹⁴ Phosphorous implant into a 4" wafer. What current density is required if we want each wafer to take no more than 1 minute to be implanted? Will our answer change if we change the implant energy? If wafer has background boron concentration of 3x10¹⁵ cm^-3, what is the junction depth after implant? 150 keV Phosphorous has R_P = 0.2 µm; R_P = 0.06 µm. If the implanted sample is annealed for 30 m at 950°C in an inert atmosphere, what will peak concentration be? Where will junction depth be? The diffusion coefficient of P (D) at 950°C is = 3x10 ^-15 cm²s^-1 .

Ans: N _p = 6.6x10¹⁸ cm^-3 and current density (J) =0.27µA/cm^-2, x _j = 0.435 µm. If the implanted profile is Gaussian, later thermal anneal cycles produce a Gaussian profile as well.