Chapter 3 : Fabrication of CMOS Integrated Circuits

Table 10 Diffusion verses Ion Implantation

Diffusion	Ion Implantation
No damage created by doping Batch fabrication Usually limited to solid solubility Low surface concentration hard to achieve without a long drive-in Low dose predeposition very difficult	Room temperature mask Precise dose control Wide range of doses Accurate depth control Implant damage enhances diffusion Dislocations caused by damage may cause junction leakage Implant channeling may affect profile Low throughput Junction depth limited to 1 micron