The temperature dependence is often shown graphically in an Arrhenius plot where the logarithm diffusion coefficient is plotted against 1/T . Such a plot will be a straight line with slope-E_a/k and intersects the log( D) axis in log(D₀) . The Arrhenius plot of B, P and As in Si is shown in Fig.3.36. The D₀ and E_a of a particular dopant can be determined experimentally by measuring the diffusion coefficient at different temperatures. The temperature dependency of the diffusion process is exploited for significant matter transport and usually the temperature is kept above 800°C for almost all dopants.

Chapter 3 : Fabrication of CMOS Integrated Circuits
The temperature dependence is often shown graphically in an Arrhenius plot where the logarithm diffusion coefficient is plotted against 1/T . Such a plot will be a straight line with slope-E_a/k and intersects the log( D) axis in log(D₀) . The Arrhenius plot of B, P and As in Si is shown in Fig.3.36. The D₀ and E_a of a particular dopant can be determined experimentally by measuring the diffusion coefficient at different temperatures. The temperature dependency of the diffusion process is exploited for significant matter transport and usually the temperature is kept above 800°C for almost all dopants.
	Fig. 3.36 : The temperature dependency of diffusion constant of B, P and As in Si
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